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H.J. Whitlow, System on Chip (SoC) microcontrollers (μC) as low-cost digitisers for ion beam analysis (IBA) instruments. Nucl. Instrum. Methods B. B 383 (2016) 245–249

W. Insuan, P. Khawmodjod, H. J. Whitlow, P. Soonthondecha, F. Malem, O. Chienthavorn; High throughput and low cost analysis of trace volatile phthalates in seafood by online coupling of monolithic capillary adsorbent with GC-MS;, J. Agric. Food Chem., 64(2016), 64 (16)3287–3292. DOI: 10.1021/acs.jafc.6b00742

N. Puttaraksa, H.J. Whitlow, M. Napari, L. Meriläinen, L. Guibert; Development of a microfluidic design for an automatic lab-on-chip-operation Microfluid Nanofluid 20(2016)141-152,
DOI 10.1007/s10404-016-1808-0

C. Vockenhuber, K. Arstila, J. Jensen, J. Julin, H. Kettunen, M. Laitinen, M. Rossi, T. Sajavaara, M. Thöni, H. J. Whitlow; Energy loss and straggling of MeV Si ions in gases; Nucl. Instrum. Methods B391(2017)20.

Rattanaporn Norarat, Karuna Jainontee, Wanlapaporn Thianthaisong, Sukonlaphat Sriwang, Hideki Nakajima, Orapin Chienthavorn, Edouard Guibert, Harry J Whitlow; MeV ion exposure behaviour of PMMA resist polymer studied by synchrotron light spectroscopies, Nucl. Instrum. Methods. B 404 (2017) 238–242;

Liping Wang, Clemens Meyer; Edouard Guibert; Alexandra Homsy; Harry J Whitlow; Fabrication of high-transmission microporous membranes by proton beam writing-based molding technique,  Nucl. Instrum. Methods. B 404 (2017) 224–227;

Ridthee Meesat Wanwisa Sudprasert, Edouard Guibert, Liping Wang, Thibault Chappuis, Harry J. Whitlow; Micro-PIXE study of metal loss from dental amalgam, Nucl. Instrum. Methods. B 404 (2017) 106–109;

Luc Stoppini, Harry J Whitlow, Edouard Guibert; Patrick Jeanneret; Alexandra Homsy; Joy Roth; Sven Krause; Adrien Roux; Post-focus expansion of ion beams for low fuence and large area MeV ion irradiation: scaling from the single-event to the system level in human brain tissue and electronics devices. Nucl. Instrum. Methods. B 404 (2017) 87–91.

Anna Krammer, Arnaud Magrez, Wolfgang A. Vitale, Piotr Mocny, Patrick Jeanneret, Edouard Guibert, Harry J. Whitlow, Adrian M. Ionescu, and Andreas Schüler; Elevated transition temperature in Ge doped VO2 thin films; Journal of Applied Physics 122, (2017) 045304;